Enabling Nano-Scale Technology in Manufacturing
Technology

Step and Flash® imprint lithography (S-FIL®) was developed at the University of Texas at Austin. The technique is based on the ancient craft of embossing, with an adaptation to modern semiconductor needs. The technique uses a fused silica imprint mask (template) with a circuit pattern etched into it.

The fused silica surface, coated with a release layer, is gently pressed into a thin layer of low viscosity, silicon-containing monomer. When illuminated by a UV lamp, the surface is polymerized into a solid layer. Upon separation of the fused silica template, the circuit pattern is left on the wafer surface. A residual layer of polymer between features is eliminated by an etch process, and a perfect replica of the pattern is ready to be used in semiconductor processing for etch or deposition. Only the template fabrication process, typically accomplished with an e-beam writer, limits the resolution of the features. Sub-20 nm have been made to date that exceed the present requirements in the International Technology Roadmap Semiconductors (ITRS).
 

The S-FIL process has several important advantages over conventional optical lithography and EUV lithography. The parameters in the classic photolithography resolution formula (k1, NA, and lambda) are not relevant to S-FIL applications, because this technology does not use reduction lenses. Investigations by MII and others in the sub-100 nm regime indicate that the resolution is only limited by the pattern resolution on the template. The resolution of the S-FIL process is a direct function of the resolution of the template fabricating process. Therefore, S-FIL tools are multi-generational and should have longer life than optical lithography tools, which have to be replaced when the exposure wavelength is decreased. S-FIL templates are typically fabricated using conventional optical phase-shift mask technology. Electron beam writers that provide high resolution, but lack the throughput required for mass production, are used. The S-FIL process, therefore, takes advantage of the resolution offered by e-beam technology, without compromising throughput and tool life.

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Copyright 2008