Project
Title: Nano-Imprint Lithography
Infrastructure for Low Cost Replication at the 65nm Node and
Beyond
Short
summary: Design and demonstrate technology for step
and flash imprint lithography (S-FIL™), a novel method
of transferring integrated circuit patterns to the surface of
a semiconductor wafer by molding of three-dimensional features
potentially as small as 20 nanometers or less.
Project
duration: 5/1/2004 - 4/30/2007
Total project (est.): $36,790,485.00
Requested ATP funds: $17,623,118.00
Overall
Objectives
----------------
Step and Flash Imprint Lithography is a step and repeat nano-pattern
replication technique with sub-20nm resolution capability that
has the potential to lead to a low cost, high throughput process.
It possesses important advantages over photolithography (PL)
and other next generation lithography (NGL) techniques since
it does not require expensive optics, advanced illumination
sources, or specialized resists that are central to PL and NGL
technologies. This proposed research seeks to mitigate the technology
risks associated with the implementation of S-FIL at upcoming
key semiconductor technology roadmap nodes (ie: 65nm node, 45nm
node, and beyond).
Molecular
Imprints, Inc. (MII) has put together a NIST-ATP team to develop
S-FIL technology for CMOS fabrication at the 65nm node and beyond.
MII will lead the joint venture and the partners are: Motorola,
KLA-Tencor, Photronics, and University of Texas at Austin. This
team will have the ability to address all the key technical
risks associated with developing a complete infrastructure for
the integration of S-FIL technology into microelectronics fabrication
at the 65nm node and beyond.
Detailed
Program Goals:
-------------
Demonstrate feasibility of patterning at the 65nm nodes and
beyond using step and flash imprint lithography with appropriate
overlay alignment accuracy, throughput, CD control and process
yields. A particular theme of the project will be to address
the patterning of dense contacts. Dense contacts represent a
critical lithography level where most new (shorter wavelength)
lithography technologies are introduced. Therefore, the value
of the S-FIL technology can be evaluated by attempting to pattern
dense contacts without introducing forbidden pitch structures
that are encountered in sub-wavelength optical lithograph.
The
joint venture partners and their roles are:
---------------------------------------------------
S-FIL
tool/process technology development
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The full
NIST ATP announcement, which provides additional details, can
be viewed at the
NIST weblink.
